Introduction to VLSI Design BEU Question Paper Solution

Introduction to VLSI Design BEU Question Paper Solution:- In this article, I have provided the solution to the Introduction to VLSI Design question paper, along with its solution based on the BEU question paper. I have strived to create solutions that are simple and easy to understand, ensuring that every student can grasp the concepts.

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1. Answer any Seven of the following as directed. 2*7=14.

(a) What is a depletion mode device?

(b) What is the body effect?

(c) What is the cause of storage time in a bipolar transistor?

(d) What is meant by the fan-out of a logic gate?

(e) Charge moves from VDs is applied to Towhen.

(f) What is sheet resistance?

(g) What is a dynamic logic?

(h) List different timings used in memory cells.

(i) What do you understand by propagation delay?

(j) What is meant by logical effort?

2. (a) Explain why the drain current keeps on increasing even after the V Dear voltage whereas it should have been fixed for an ideal MOS transistor.

(b)What is the physical origin of the latch-up problem in CMOS? How can the latch-up problem be prevented?

3. (a) Explain the method of threshold voltage extraction from the current-voltage characteristics of MOSFET.

3. (b) Consider a MOS system with the following parameters: Gate oxide thickness (t ox )=200 A Gate to substrate contact potential ( phi GC )=0.85 V Substrate doping (N_{A}) = 2 * 10 ^ 15 * c * m ^ – 3Trapped oxide charge (Q_{m}) = q ^ 2 * 10 ^ 11 * C / c * m ^. Determine the threshold voltage V T 0under zero bias at room temperature(T = 300K) Given: epsilon ax =3.97 epsilon 0 and epsilon Sj =11.7 epsilon 0

4. (a) What do you understand by constant voltage scaling? What is the effect of constant field scaling on (i) power dissipation and (u) delay time?

4. (b) Explain the method of channel length modulation parameter extraction from the current-voltage characteristics of MOSFET.

5. (a) Define VIL, VIH, VOH, and VOL voltage levels in the voltage transfer characteristics of an inverter. Show that the V for a CMOS inverter is given by 2Vout +VTO. PVDD + KRVTO, nVIL =where KR = kn /kp.

5. (b) Consider a CMOS inverter with the following device parameters: nMOS VTo.n=0.6V Hn Cox = 60μA/v2 PMOS: VTO. P = -0.8 V Hp Cax=20µA/V2Determine the (W/L) ratios of the nMOS and pMOS transistor such that the switching threshold (V) is 1-5 V Given VDD = 3 V, λ = 0.

6. (a) Suppose a unit inverter with three units of input capacitance has a unit drive. What is the drive of a 4x inverter? What is the drive of a 2-input NAND gate with 3 units of input capacitance?

6. (b) What is a transmission gate (TG)? Design a circuit for a 2-input TG-based XOR gate.

7. (a) Explain the problem of charge sharing in dynamic CMOS designs and its probable solution.

7. (b) Compare the BiCMOS logic with CMOS in terms of delay and power consumption. Why was BiCMOS logic used in Intel Pentium and Pentium Pro but discarded in Pentium II?

8. (a) Explain the dual rail domino logic. Design XOR/XNOR gate using dual rail domino logic.

(b) Implement the full transmission gates. adder using.

9. (a) Explain the working of the 4T SRAM cell with a neat diagram.
(b) Explain the working of a 3T DRAM with a neat diagram.

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